ESD5344D will semiconductor ltd. 1 revision 1. 4 , 201 8 / 12 / 26 ESD5344D 4 - line s , un i - d irectional, ultra - low capacitance trans ient voltage suppressors descriptions the ESD5344D is a n ultra - low capacitance tvs (transient voltage suppressor) array designed to protect high speed data interfaces. it has been specificall y designed to protect sensitive electronic components which are connected to data and transmission lines from over - stress caused by esd (e lectro s tatic d ischarge ) . the ESD5344D in corporates four pairs of ultra - low capacitance steering diodes plus a tvs di o de. the ESD5344D may be used to provide esd protection up to 2 0 k v (contact discharge ) according to iec61000 - 4 - 2 , and withstand peak pulse current up to 4 a ( 8/20 s ) according to iec61000 - 4 - 5. the ESD5344D is available in dfn2510 - 10l package. standard produ cts are pb - free and halogen - free. features ? stand - off voltage: 5 v max. ? transient protection for each line according to iec61000 - 4 - 2 (esd) : 2 0 k v ( contact discharge ) iec61000 - 4 - 4 (eft): 40a (5/50ns ) iec61000 - 4 - 5 (surge): 4 a (8/20 s) ? ultra - low capacitance: c j = 0.4 pf typ. ? ultra - low leakage current: i r <1 na typ. ? l ow clamping voltage : v cl = 1 4 v t yp. @ i pp = 16a (tlp) ? solid - state silico n technology applications ? usb 2.0 and usb 3.0 ? hdmi 1.3, hdmi 1.4 and hdmi 2.0 ? sata and esata ? dvi ? ieee 1394 ? pci express ? portab le electronics and notebooks h ttp // : www. sh - willsemi.com dfn 2510 - 10 l (bottom view) pin c onfiguration (top view) 5v 4 = device code * = month code ( a~z) marking order i nformation device package shipping esd5344 d - 10 /tr dfn 2510 - 10 l 3 000/tape&reel 1 2 3 4 5 6 7 8 9 10 i / o 1 i / o 2 i / o 3 i / o 4 gnd gnd nc nc nc nc 1 5 6 10 5 v 4 * 1 4 5 2 3 , 8
ESD5344D will semiconductor ltd. 2 revision 1. 4 , 201 8 / 12 / 26 absolute m aximum r ating s electrical characteristics (t a =25 o c, unless otherwise noted) definitions of electrical characteristics parameter symbol rating unit peak pulse power ( t p = 8/20 s) p pk 50 w peak pulse current (t p = 8/20 s) i pp 4 a esd according to iec61000 - 4 - 2 air discharge v esd 2 0 k v esd according to iec61 000 - 4 - 2 contact discharge 2 0 j unction t emperature t j 1 25 o c operating temperature t op - 40 ~ 85 o c lead temperature t l 260 o c storage temperature t stg - 55~150 o c i v v f v r w m v b r v f c i p p i f i r i b r v c l i p p v f f o r w a r d v o l t a g e i f f o r w a r d c u r r e n t v f c f o r w a r d c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t v r w m r e v e r s e s t a n d - o f f v o l t a g e i r r e v e r s e l e a k a g e c u r r e n t v b r r e v e r s e b r e a k d o w n v o l t a g e v c l c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t
ESD5344D will semiconductor ltd. 3 revision 1. 4 , 201 8 / 12 / 26 electrical characteristics ( t a = 25 o c, unless otherwise noted ) notes: 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2n s, averaging wind ow from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) contact discharge mode, according to iec61000 - 4 - 2. 3) non - repetitive current pulse, according to iec61000 - 4 - 5. parameter symbol condition min. typ. max. unit rever se maximum working voltage v rwm 5.0 v rever se leakage current i r v rwm = 5 v <1 1 00 n a rever se br eakdown voltage v br i t = 1ma 7.0 8. 0 9.0 v forward voltage v f i t = 1 0ma 0.6 0. 9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 1 4 v dynamic resistance 1) r dyn 0. 33 clamping voltage 2 ) v cl v esd = +8kv 14 v clamping voltage 3 ) v cl i pp = 1a , t p = 8/20s 1 0 v i pp = 4 a, t p = 8/20s 1 2 v junction capacitance c j v r = 0v, f = 1mhz any i/o pin to gnd 0.40 0.65 pf v r = 0v, f = 1mhz between any i/o pin 0. 25 0. 40 pf
ESD5344D will semiconductor ltd. 4 revision 1. 4 , 201 8 / 12 / 26 typical characteristics ( t a = 25 o c, unless otherwise noted ) 8/20 s w aveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse current non - repetitive peak pulse p ower vs. pulse time contact discharge current waveform per iec61000 - 4 - 2 capacitance vs. rever se voltage power derating vs. ambient t emperature 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 0 100 20 90 50 10 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t 0 1 2 3 4 5 8 9 10 11 12 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 1 2 3 4 5 0.20 0.25 0.30 0.35 0.40 0.45 0.50 between any i/o pin any i/o pin to gnd f = 1mhz c j - junction capacitance (pf) v r - reverse voltage (v)
ESD5344D will semiconductor ltd. 5 revision 1. 4 , 201 8 / 12 / 26 typical characteristics ( t a = 25 o c, unless otherwise noted ) esd clamping ( +8kv contact discharge per iec61000 - 4 - 2) tlp measurement esd clamping ( - 8kv contact discharge per iec61000 - 4 - 2 ) 0 2 4 6 8 10 12 14 16 -2 0 2 4 6 8 10 12 14 16 18 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
ESD5344D will semiconductor ltd. 6 revision 1.4, 2018/12/26 package outline dimensions dfn2510-10l recommended land pattern (unit: mm) symbol dimensions in millimeter min. typ. max. a 0.50 0.55 0.60 a1 0.00 0.02 0.05 a3 0.15 ref. d 2.40 2.50 2.60 e 0.90 1.00 1.10 e1 0.50 ref. b 0.15 0.20 0.25 b1 0.13 0.18 0.23 b2 0.35 0.40 0.45 e 0.50 bsc l 0.28 0.39 0.50 notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met. 0.60 0.20 0.20 0.50 0.40 0.50
ESD5344D will semiconductor ltd. 7 revision 1.4, 2018/12/26 tape and reel information reel dimensions tape dimensions w p1 quadrant assignments for pin1 orientation in tape q1 q2 q4 q3 q1 q2 q4 q3 rd reel dimension w overall width of the carrier tape p1 pitch between successive cavity centers pin1 pin1 quadrant user direction of feed rd 7inch 13inch 8mm 12mm 2mm 4mm 8mm q1 q2 q3 q4
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